💎 200mm (8-Inch) SiC Sublimation Crystal Growth

High-Purity Silicon Carbide (200mm) Boule Plant Model

Underwrite 2,400°C physical vapor transport (PVT) sublimation furnaces growing defect-free 200mm (8-inch) Silicon Carbide (SiC) single-crystal boules for 800V EV traction inverters and grid fast chargers. Model raw substrate sales ($1,250/wafer), and 15-yr IRR.

1. Capacity & Unit Economics

Annual 200mm SiC Substrates (Wafers / Yr)

Single-Crystal SiC Substrate Price ($ / Wafer)

Graphite Hot Zone & Argon Power OpEx ($ / Wafer)

PVT Furnace Array & Diamond Saws CapEx ($M)

2. Financial Returns & Yield

800V EV TRACTION SiC WAFERS

Annual Net EBITDA

$0 / yr

15-Yr Project IRR

0.0%

Gross Revenue

$0 / yr

Total CapEx

Annual OpEx

$0 / yr