⚡ 4.8 eV Ultra-Wide-Bandgap Beta-Ga2O3 MOSFETs

Beta-Gallium Oxide Ultra-Wide-Bandgap Fab Model

Underwrite 150mm melt-grown beta-gallium oxide (β-Ga2O3) wafer foundries fabricating 4.8 eV bandgap power MOSFETs (achieving 99.4% power conversion efficiency in renewable wind and HVDC grid converters at one-third the cost of SiC). Model OEM wafer contracts ($18,500/wafer), and 15-yr IRR.

1. Capacity & Unit Economics

Annual 150mm Ga2O3 Wafers Processed (Wafers / Yr)

Processed Power MOSFET Wafer Value ($ / Wafer)

Gallium Feedstock & Stepper Cleanroom OpEx ($ / Wafer)

Turnkey 150mm Wide-Bandgap Fab CapEx ($M)

2. Financial Returns & Yield

99.4% CONVERTER EFFICIENCY

Annual Net EBITDA

$0 / yr

15-Yr Project IRR

0.0%

Gross Revenue

$0 / yr

Total CapEx

Annual OpEx

$0 / yr